Abstract:The Er3+-doped Al2O3 films were prepared by sintering Er-ion-implanted γ-AlOOH xerogel films on SiO2/Si(100) substrates. In a cycle, the γ-AlOOH xerogel films about 50 nm thick were dip-coated using aluminium isopropoxide-derived γ-AlOOH sols; the Er ions were then implanted into the γ-AlOOH xerogel films using an ion energy of 45 keV with different doses of 5×1014 to 1×1016 ions cm−2. Er3+-doped Al2O3 films were formed after 1, 2, and 4 cycles of dip-coating and implantation at different sintering temperatures of 800–1200 °C. The photoluminescence (PL) spectra were observed with a main peak at 1.533 μm and a side peak at 1.549 μm for all the Er3+-doped Al2O3 films. The intensity of PL peak of the Er3+-doped Al2O3 film obtained after 4 cycles with 5×1015 ions cm−2 dose at every cycle and sintered at 900 °C for 5 h, increased by about 10 and 3 times compared with that of the films obtained after 1 and 2 cycles. At the same sintering temperature of 900 °C, the intensity of PL peak of the Er3+-doped Al2O3 films first increased with the increase of dose from 5×1014 to 5×1015 ions cm−2 at every cycle, and then a saturation tendency was observed when the dose further was increased to 1×1016 ions cm−2. For the samples using 5×1015 ions cm−2 dose at every cycle, the PL intensity increased with the increase of sintering temperature from 800 to 1200 °C.

Temperature-dependent Photoluminescence Spectra of Er–Tm-codoped Al2O3 Thin Film

Temperature-dependent photoluminescence spectra of Er-Tm codoped calcium boroaluminate glasses.

Near infrared broadband from Er-Tm codoped zinc oxide and temperature-dependent properties

Near Infrared Broadband from Er-Tm Co Dop Ed Zinc Oxide and Temp Erature-Dep Endent Prop Erties

Yb3+ → Er3+ Energy Transfer in Al2O3 and Temperature Characteristic of Near-Infrared Photoluminescence

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

Photoluminescence Properties of Er3+-doped Al2O3 Film Synthesized from Er-ion-implanted Γ-Alooh Xerogel

Electrophoretic Deposition and Photoluminescent Properties of Eu-doped BaTiO3thin Film from a Suspension of Monodispersed Nanocrystallites

Realization of Modulating Broadband Emission from Er–Tm Codoped Calcium Boroaluminate Glasses by Dual-Wavelength Pumping

Low-temperature photoluminescence characteristic of Tm-doped Ga 2 O 3 films for light emitting diodes application

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers

Energy Transfer and Frequency Upconversion in Er3+-Yb3+ Codoped Oxy-Fluoro-tungstosilicate Glasses

Light-Emitting Devices Based on Erbium-Doped Tio2/P(+)-Si Heterostructures: Engineering of Electroluminescence Via Aluminum Co-Doping

Optical Absorption and Emission Properties of Er3+ Doped Mixed Alkali Borosilicate Glasses

ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

Phonon-mediated temperature dependence of Er 3+ optical transitions in Er 2 O 3

Temperature-Dependent Luminescence Originating from the Recombination of Excitons in Organic Light-Emitting Materials

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

Temperature-Dependent Photoluminescence Of Organic Light-Emitting Materials: Types Excitons Involved In The And Characteristics Of Emitting Process

Er3+ related 1.53μm emission from Er–Si-codoped ZnO multilayer film prepared by rf-sputtering

Preparation and Photoluminescence Properties of Tb3+-doped Al2O3 Films on Silicon Substrates