Abstract:SiO2:Si:Er films were deposited on n+-Si substrate using the magnetron sputtering technique, and then Au/ SiO2: Si:Er /n+-Si diodes were fabricated. Both Er3+ photoluminescence (PL) from the SiO2: Si: Er/n+-Si and electroluminescence (EL) from the Au/SiO2: Si: Er /n+-Si diodes were studied. The 1.54 micrometers PL intensity ratio of SiO2: Si: Er/n+-Si to that of the SiO2: Er/n+-Si measured under identical conditions can be as large as ~30. While the 1.54 micrometers EL intensity ratio of an Au/ SiO2:Si:Er/n+-Si diode to that of an Au/SiO2:Er/n+-Si diode measured under identical conditions can be as large as 6. We also deposited nanoscale (SiO2:Er/Si(1.0~4.0nm)/SiO2:Er) sandwich structure, in which the silicon layer between the two SiO2:Er barriers was 1.0~4.0 nm thick with an interval of 0.2 nm, on both n+-Si and p-Si substrates. Each EL spectrum of the Au/nanoscale (SiO2:Er/Si/SiO2:Er)/n+-Si diodes can be fitted by three Gaussian bands with peak energies of 0.757 eV (1.64 micrometers ), 0.806 eV (1.54 micrometers ) and 0.860 eV (1.44 micrometers ), and full widths at half maximum of 0.052, 0.045 and 0.055 eV, respectively. Among the Au/nanoscale (SiO2:Er/Si/SiO2:Er)/n+-Si diodes with the Si layers having various thicknesses, the EL intensities of the 1.64, 1.54 and 1.44 micrometers bands of the diode with a 1.6 nm Si layer attain maxima which are 22, 8 and 7 times larger than those of the control diode without any Si layer (Au/nanoscale SiO2:Er/n+-Si), respectively.

ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

[Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Film and Er-doped Silicon-Rich Silicon Nitride Film and Its Annealing Behavior].

Room temperature photoluminescence from Zr4+-doped sol–gel silica

Room Temperature Photoluminescence Property of Boron-Doped Sol–gel Silica

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Room-temperature Luminescence at 1.54 Μm and Other Wavelengths from Er-doped Si-rich Si Oxide

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

Photoluminescence of Tb3+ Doped SiNx Films Grown by Plasma-Enhanced Chemical Vapor Deposition

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

Room temperature Er<sup>3+</sup>1.54 µm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Room Temperature Photoluminescence from Erbium-Doped Silica Thin Films Prepared by Cosputtering

1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Room-temperature Er3+1. 54 Tμm Electroluminescence from SiO2 : Er Films and Six O2 :Er Films

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers