Abstract:Prior studies have shown that photoluminescence from Er3+ impurities in silicon is severely limited at room temperature by non-radiative relaxation and solid solubility; and room temperature emission from Er3+ in oxide-based hosts becomes diminished at high erbium concentrations. This work presents studies of thin films (0.2 micron thick) prepared by vacuum co-evaporation from elemental sources (Er, Si and Si/Ge) followed by vacuum annealing (600 degrees C); materials of this type, which are produced with high Er3+ concentrations, are shown to be capable of yielding strong room-temperature photoluminescence. Alloy films of Si-Er-O and Si-Ge-Er-O, containing (20 +/- 2) at. % Er and incorporating (16 +/- 2) at. % O (introduced via vacuum scavenging reactions), exhibit emission bands with dominant components at 1.51 and 1.54 micron (~0.04-micron overall spectral widths). Results are discussed in terms of Er-O complex formation and effects of local randomness on cooperative inter-Er3+ energy transfer among thermal-broadened and local-field Stark-split 4I13/2 to 4I15/2 transitions. Advantages of scalability and low-cost associated with this method of producing optically active silicon-based materials are discussed.

Room temperature Er<sup>3+</sup>1.54 µm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering

1.54-Mu M Electroluminescence from Si-Rich Erbium Silicate

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

Room-temperature Er3+1. 54 Tμm Electroluminescence from SiO2 : Er Films and Six O2 :Er Films

Room-temperature 1.54-μm electroluminescence from Er-doped Si-rich SiO2 films deposited on p-Si by magnetron sputtering

1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Room Temperature Photoluminescence from Erbium-Doped Silica Thin Films Prepared by Cosputtering

Room temperature visible electroluminescence from SrTiO3/p+-Si heterostructure

Room-temperature 1.54 Μm Electroluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited on N+-Si Substrates by Magnetron Sputtering

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers