Abstract:In the past years, light-emitting devices (LEDs) based on erbium (Er)-doped insulators or wide-bandgap semiconductors have received intensive attention because the intra-4f transition (4I13/2→4I15/2) of Er3+ ions at ～ 1540 nm has potential applications in the optical interconnection for silicon-based circuits. The LEDs with rare-earth (RE)-doped SiOx (x ≤ 2) or SiNx (x ≤ 4/3) films have been well investigated as the silicon-compatible emitters. However, they suffer difficulty in injecting current and easing fatigue. In this context, the LEDs with RE-doped oxide semiconductors have been extensively investigated out of research interest in recent years. Among the oxide semiconductors, TiO2 is a desirable host for RE-doping because it is transparent for visible and infrared light, and cost-effective, and has considerably high RE solubility. In our previous work (Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103), we have realized erbium (Er)-related visible and near-infrared (～ 1540 nm) electroluminescence (EL) from the LED with a structure of ITO/TiO2:Er/SiO2/n+-Si, in which TiO2:Er refers to the Er-doped TiO2 film as the light-emitting layer. In this work, we co-dope ytterbium (Yb) into the TiO2:Er film in the aforementioned LED to significantly enhance the Er-related visible and near-infrared EL. It is revealed that a certain amount of Yb co-doping enables the TiO2:Er film to transform its crystal phase from anatase to rutile. Such a phase transformation reduces the symmetry of crystal field surrounding the Er3+ ions incorporated into the TiO2 host. Moreover, the substitution of over-sized Yb3+ ions for Ti4+ ions in the TiO2 host leads to the distortion of the crystal field around the Er3+ ions. The aforementioned symmetry-reduction and distortion of the crystal field increase the probabilities of the intra-4f transitions of Er3+ ions. Due to the aforementioned reason, the Yb co-doping into the TiO2:Er film remarkably enhances the EL from the corresponding LED. It is believed that the strategy of Yb-codoping can be adopted to enhance the EL from the LEDs with other RE-doped TiO2 films.

Room-temperature Er3+1. 54 Tμm Electroluminescence from SiO2 : Er Films and Six O2 :Er Films

Room-temperature 1.54-μm electroluminescence from Er-doped Si-rich SiO2 films deposited on p-Si by magnetron sputtering

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Room-temperature 1.54 Μm Electroluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited on N+-Si Substrates by Magnetron Sputtering

Room-temperature Luminescence at 1.54 Μm and Other Wavelengths from Er-doped Si-rich Si Oxide

Room temperature Er<sup>3+</sup>1.54 µm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering

Electroluminescence from the Light-Emitting Devices with Erbium-Doped SrTiO3 Films on Oxidized Silicon Substrate

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Room temperature visible electroluminescence from SrTiO3/p+-Si heterostructure

Structural and Photoluminescence Properties of Er2O3Films by Sol-Gel Method

Room-Temperature 1.54-Mu M Electroluminescence From The Au/Nanometer (Sio2 : Er/Si/Sio2 : Er)/N(+)-Si Structure

Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

Electroluminescence from Silicon‐Based Light‐Emitting Devices with Erbium‐Doped Ta2O5 Films

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Study on Photoluminescence Characteristics of SiOx: Er Thin Films

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Electroluminescence from Light-Emitting Devices with Erbium-Doped Tio2 Films: Enhancement Effect of Yttrium Codoping