Abstract:We report on erbium (Er) related electroluminescence (EL) in the visible and near infrared (NIR) regions from the light-emitting device (LED) based on the Er-doped ZnO (ZnO:Er)/n-Si isotype heterostructure formed by sputtering ZnO:Er film on n-Si/n(+)-Si epitaxial wafer. Herein, the ZnO:Er film exhibits n-type in electrical conduction. The aforementioned LED is electroluminescent only under sufficiently high forward bias with the negative voltage connecting to n(+)-Si substrate. Such forward bias enables the electrons from n-Si to enter into the ultra-thin SiOx (x <= 2) layer inherently existing between the ZnO:Er film and n-Si via Poole-Frenkel conduction mechanism and, subsequently, to drift into the ZnO:Er film thus becoming hot electrons, which impact-excite the Er3+ ions to emit characteristic visible and NIR light. Furthermore, the Er-related EL from the aforementioned LED can be significantly enhanced through adopting the strategy of co-doping F ions into the ZnO host, which brings about twofold primary effects. Firstly, due to the atomic size compensation between F and Er3+ ions, the ZnO crystal grains become larger to accommodate much more optically active Er3+ ions. Secondly, the partial substitution of F ions for O2- ions around the Er3+ ion reduces the symmetry of pseudo-octahedral crystal field of Er3+ ion, thus increasing the probabilities of intra-4f transitions of Er3+ ions. We believe that this work sheds light on developing efficient silicon-based LEDs using the Er-doped oxide semiconductors. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Photo- and electro-luminescence at 1.54 μm from Er3+ in SiC:Er2O3 films and structures

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Strong Enhancement of Er(3+) 1.54 Μm Electroluminescence Through Amorphous Si Nanoparticles.

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Room-temperature Luminescence at 1.54 Μm and Other Wavelengths from Er-doped Si-rich Si Oxide

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

1.54-Mu M Electroluminescence from Si-Rich Erbium Silicate

PHOTOLUMINESCENCE PROPERTIES OF <font>Er</font> DOPED INTO <font>C</font>-RICH <font>SiC</font> NANOPARTICLE FILMS

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers

Room-temperature Er3+1. 54 Tμm Electroluminescence from SiO2 : Er Films and Six O2 :Er Films

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Photoluminescence properties of Er doped into C-rich SiC nanoparticle films