Abstract:Er-doped Si-rich SiO2 (SRSO:Er) films have been deposited on n+-Si substrates by the magnetron sputtering technique, and both photoluminescence (PL) and electroluminescence (EL) at 1.54 μm have been observed from the films at room temperature. Dependence of PL and EL intensities on the excess-Si content and annealing temperature has been studied. It is found that proper Si content and annealing temperature can evidently enhance EL intensity. An SRSO:Er film with 20% excess Si (area ratio of the Si target to the whole target) had more intense EL than a SiO2:Er film without excess Si, both annealed at 800°C, by a factor of 5. This fact clearly demonstrates that energy coupling between Si nanometer particles and Er3+ ions also exists in the EL process as well as in the PL process. Experimental results also indicate that crystallization is not a prerequisite for NSPs enhancing luminescence in SRSO:Er films. The PL and EL spectra of the SRSO:Er films have much broader full widths at half maximum (FWHM, ∼60 nm) than those of the other Er-doped materials reported. This wide FWHM can perhaps be used in wavelength division multiplexing in optical communication in future.

1.54-Mu M Electroluminescence from Si-Rich Erbium Silicate

Room temperature Er<sup>3+</sup>1.54 µm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

Photo- and electro-luminescence at 1.54 μm from Er3+ in SiC:Er2O3 films and structures

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

1.54 µm electroluminescence in SiC:Er2O3 films

Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS

1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Room-temperature 1.54-μm electroluminescence from Er-doped Si-rich SiO2 films deposited on p-Si by magnetron sputtering

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

Evolution From Random Lasing To Erbium-Related Electroluminescence From Metal-Insulator-Semiconductor Structured Light-Emitting Device With Erbium-Doped Zno Film On Silicon