Abstract:Erbium doped Si-related compound films, with the 1540 nm emission coinciding with the minimum loss window of optical telecommunication, are regarded as appealing platforms of light sources for silicon photonics. In many previous reports, however, the unipolar carrier injection in silicon oxide/nitride films leads to favorable impact excitation of Er rather than sensitization, requiring high onset voltage that is not compatible with Si microelectronics. Silicon rich oxynitride (SRON) with tunable bandgap enables equivalent bipolar injection, yet there are few reports about light emitting devices (LEDs) based on this material with Er doping. Here, sensitized electroluminescence (EL) from erbium doped SRON with an onset voltage as low as 5 V has been demonstrated. The sensitization mechanism is evaluated by correlating the evolution of charge transport in SRON films subjected to different thermal treatments with that of Er3+ EL. The EL can be attributed to bipolar Poole-Frenkel injection of carriers and subsequent capture by Si dangling bond related trap states, followed by energy transfer to Er3+ ions. These results indicate that SRON serves as a promising Er3+ host for complementary metal-oxidesemiconductor (CMOS) compatible light sources.

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Enhanced Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices by Nh3 Plasma and Annealing Treatment

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Electroluminescence from Au/Si Nitride Film/si with the Film Prepared by Electron Cyclotron Resonance Method

Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Evolution of Electroluminescence from Silicon Nitride Light-Emitting Devices Via Nanostructural Silver

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Electroluminescence from Silicon-based Zn_2SiO_4:ZnO Films

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Electroluminescence from Si-Rich Sinx/N-Rich Siny Multilayer Light-Emitting Devices

Enhancing the Photoluminescence Intensity of Silicon-Rich Nitride Film by Localized Surface Plasmon Enhanced Photo-Excitation

VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION

Room temperature electroluminescence from a nanocrystalline diamond/Si heterojunction

Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride.

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Strong Green-Yellow Electroluminescence From Oxidized Amorphous Silicon Nitride Light-Emitting Devices