Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION

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Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Room Temperature Visible Electroluminescence in Silicon Nanostructures

Strong Violet And Green-Yellow Electroluminescence From Silicon Nitride Thin Films Multiply Implanted With Si Ions

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Electroluminescense and photoluminescense of nano-crystalline Si:H films

Electroluminescence from Si Nanocrystals by Annealing Amorphous Silicon Carbide Films

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

Strong Visible and Near-Infrared Electroluminescence and Formation Process in Si-Rich Polymorphous Silicon Carbon

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Stable Electroluminescence and Its Mechanism in Laser Crystallized A-Si:H/a-sinx:h Superlattices

Electroluminescence from Au/Si Nitride Film/si with the Film Prepared by Electron Cyclotron Resonance Method

Electroluminescence from Sio2 Thin Film Embedded with Self-Assembled Gold Nanoparticles

Visible Electroluminescence from Pulsed Laser Annealed A-Si : H/A-Sinx : H Superlattices on Silicon Wafer

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Hydrogenated Nanocrystalline Silicon Carbide Films Synthesized by ECR-CVD and Its Intense Visible Photoluminescence at Room Temperature

Electroluminescence from the Light-Emitting Devices with Erbium-Doped SrTiO3 Films on Oxidized Silicon Substrate

Electroluminescence from Silicon-based Zn_2SiO_4:ZnO Films

Room temperature electroluminescence from a nanocrystalline diamond/Si heterojunction