Abstract:Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

Strong Visible and Near-Infrared Electroluminescence and Formation Process in Si-Rich Polymorphous Silicon Carbon

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Strongly Enhanced Tunable Photoluminescence In Polymorphous Silicon Carbon Thin Films Via Excitation-Transfer Mechanism

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Hydrogenated Nanocrystalline Silicon Carbide Films Synthesized by ECR-CVD and Its Intense Visible Photoluminescence at Room Temperature

VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION

Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Green Electro- And Photoluminescence From Nanocrystalline Si Film Prepared By Continuous Wave Ar+ Laser Annealing Of Heavily Phosphorus Doped Hydrogenated Amorphous Silicon Film

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Room Temperature Visible Electroluminescence in Silicon Nanostructures

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Visible Electroluminescence from Amorphous Hydrogenated Silicon Carbide Prepared by Using Organic Carbon Source

Full Color Light Emission from Amorphous SiCx:H with Organic–inorganic Structures

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

Electroluminescence from Si Nanocrystals by Annealing Amorphous Silicon Carbide Films

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride.