Abstract:Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

Strongly Enhanced Tunable Photoluminescence In Polymorphous Silicon Carbon Thin Films Via Excitation-Transfer Mechanism

Strong Visible and Near-Infrared Electroluminescence and Formation Process in Si-Rich Polymorphous Silicon Carbon

Optical Properties of Hydrogenated Silicon-Carbon Films and Greatly Enhanced Photoluminescence by Nanowire Structure

Photoluminescence Enhancement in Wide Spectral Range Excitation in CsPbBr3 Nanocrystal/ag Nanostructure Via Surface Plasmon Coupling

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Enhanced Photoluminescence of Silicon Quantum Dots in the Presence of Both Energy Transfer Enhancement and Emission Enhancement Mechanisms Assisted by the Double Plasmon Modes of Gold Nanorods

Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon

Surface Plasmon Enhanced Blue–green Photoluminescence from Carbon-Rich Amorphous Silicon Carbide Films

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Hydrogenated Nanocrystalline Silicon Carbide Films Synthesized by ECR-CVD and Its Intense Visible Photoluminescence at Room Temperature

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

The Role Of N-Si-O Bonding Configurations In Tunable Photoluminescence Of Oxygenated Amorphous Silicon Nitride Films

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

Photoluminescence from C+-Implanted Sinxoy Films Grown on Crystalline Silicon

Raman And Photoluminescence Properties Of Hydrogenated Amorphous Silicon Carbide Alloys With Low Carbide Concentration

Photoluminescence Characterization of Silicon Nanoparticles Hybridized Europium Complex

Photoluminescence From C-60-Coupled Porous Structures Formed On Fe+-Implanted Silicon

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Tuning the photoluminescence of porous silicon nanowires by morphology control