Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Optical Properties of Hydrogenated Silicon-Carbon Films and Greatly Enhanced Photoluminescence by Nanowire Structure

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Strongly Enhanced Tunable Photoluminescence In Polymorphous Silicon Carbon Thin Films Via Excitation-Transfer Mechanism

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Hydrogenated Nanocrystalline Silicon Carbide Films Synthesized by ECR-CVD and Its Intense Visible Photoluminescence at Room Temperature

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Enhanced Blue-Orange-Red Light Emission From Nc-Si:H/Sio2 Pillar Arrays Using Nanosphere Lithography

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

Tuning the photoluminescence of porous silicon nanowires by morphology control

Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Structural properties of hydrogenated amorphous silicon carbide alloys

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

Nanovoid-related large redshift of photoluminescence peak energy in hydrogenated amorphous silicon

Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays.