Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Hydrogenated Nanocrystalline Silicon Carbide Films Synthesized by ECR-CVD and Its Intense Visible Photoluminescence at Room Temperature

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

Electroluminescence from Si Nanocrystals by Annealing Amorphous Silicon Carbide Films

Deposition Of Nanocrystalline Cubic Silicon Carbide Films Using The Hot-Filament Chemical-Vapor-Deposition Method

Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Electroluminescense and photoluminescense of nano-crystalline Si:H films

Optical Properties of Hydrogenated Silicon-Carbon Films and Greatly Enhanced Photoluminescence by Nanowire Structure

Strong Visible and Near-Infrared Electroluminescence and Formation Process in Si-Rich Polymorphous Silicon Carbon

High rate fabrication of room temperature red photoluminescent SiC nanocrystals

The Room-Temperature Visible Photoluminescence from Nanocrystalline Si in Si/Sinx Superlattices

Room Temperature Visible Electroluminescence in Silicon Nanostructures

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Enhanced Visible Photoluminescence from Nc-Si/Siox Films Deposited by Electron Beam Evaporation

Visible Electroluminescence from Amorphous Hydrogenated Silicon Carbide Prepared by Using Organic Carbon Source

VISIBLE ELECTROLUMINESCENCE FROM SILICONNANOCRYSTALLITES PREPARED BY PLASMAENHANCED CHEMICAL VAPOR DEPOSITION