Abstract:Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices.

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Effects of Si Content on the Optical and Electrical Properties of SiOx Films

Microstructure Characterization of Oxidized Nanocrystalline Si:H Film by Transmission Electron Microscopy

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Oxidization Influence on Hydrogenated Nano-crystalline Silicon Film's Properties

Nanocrystalline Silicon Embedded in Silicon Suboxide Synthesized in High-Density Inductively Coupled Plasma

Enhanced Visible Photoluminescence from Nc-Si/Siox Films Deposited by Electron Beam Evaporation

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Properties of Si-rich SiO2 Films by RF Magnetron Sputtering

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Tuning Oxygen Impurities and Microstructure of Nanocrystalline Silicon Photovoltaic Materials Through Hydrogen Dilution

Synthesis of nanostructured SiC films by plasma enhanced chemical vapor deposition with hydrogen diluted hexalmethyldisiloxane as precursor

Photoluminescence characteristics of oxidized hydrogenated nanocrystalline silicon film

Synergetic effect of gas compositions on material properties of n‐type nanocrystalline silicon oxide prepared by plasma enhanced chemical vapor deposition

The Microstructure and Optical Properties of Crystallized Hydrogenated Silicon Films Prepared by Very High Frequency Glow Discharge

Deposition of SiOx films with a capacitively-coupled plasma at atmospheric pressure

Low-plasma and high-temperature PECVD grown silicon-rich SiO(x) film with enhanced carrier tunneling and light emission