Abstract:The motivation for developing silicon-based light emitters is the requirement of tiny light sources in the visible regions,which can be directly integrated into silicon chips for the analysis of different biological substances,for silicon optical couplers,and high-resolution low-cost micro displays.It is believed that the development of integrate circuit will open a door for the continuous increasing of silicon-based light emitters predicted by Moore's law.Many efforts,such as bulk silicon,Si nanocrystals,and rare earth(RE) coupled Si nanocrystals have been extensively studied.Weighing the studies mentioned above,rare RE-doped silicon light emitter,which has intense light emission even at room temperature,is a better candidate.In this report,the photoluminescence of Tb implanted SiNx films grown by plasma-enhanced chemical vapor deposition(PECVD) was investigated.And the effects of surface plasmon on the photoluminescence emission decay time of Tb3+ doped SiNx films with different sized of Ag islands films were investigated.The photoluminescence(PL) and time resolved photoluminescence(TRPL)at room temperature show that the PL of SiNx∶Tb3+ film has the highest intensity at 547 nm with corresponding emission decay time 708 ms.After sputtering silver films,the TRPL of Tb3+ ions shows the decrease of the emission decay time.An increase of emission decay time was observed due to the increased size of Ag islands after rapid thermal processing(RTP).We find good agreement between our experimental results and those predicted by a classical theory,which assumes the emitter to be a damped oscillating electric dipole.Therefore,it allows one to be confident that the silver islands do altered the emission decay time which correspondingly improve the internal quantum efficiency of the SiNx∶Tb3+.

Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon

Enhancing the Photoluminescence Intensity of Silicon-Rich Nitride Film by Localized Surface Plasmon Enhanced Photo-Excitation

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Surface plasmon enhanced light emission of silicon-rich silicon nitride: Dependence on metal island size

Effect of Scattering from Localized Surface Plasmon Resonance on Improving the Luminescence Efficiency of Silicon Nitride Light-Emitting Devices

Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Surface Plasmon Enhanced Electroluminescence of SiNx Film Based MIS Device

Surface Plasmon Enhanced Photoluminescence from Porous Silicon Nanowires Decorated with Gold Nanoparticles

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Luminescence of SiNx:Tb3+ Film and Its Coupling with Silver Mediated Surface Plasmon Polaritons

Enhancement of Zno Light Emission Via Coupling with Localized Surface Plasmon of Ag Island Film

Evolution of Electroluminescence from Silicon Nitride Light-Emitting Devices Via Nanostructural Silver

Enhanced Photoluminescence Properties of Bismuth Sulfide Nanocrystals with Core-Shell Ag@SiO_2

Enhanced Optical Absorption of Amorphous Silicon Films by Ag Nanostructures

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Enhanced Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices by Nh3 Plasma and Annealing Treatment

Effects of Surface Plasmon on the Photoluminescence Emission Decay Time of Tb~(3+) Doped SiNx Films

Enhanced Photoluminescence of Silicon Quantum Dots in the Presence of Both Energy Transfer Enhancement and Emission Enhancement Mechanisms Assisted by the Double Plasmon Modes of Gold Nanorods

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Enhancement of Light-Extraction Efficiency of SiNx Light Emitting Devices Through a Rough Ag Island Film

Light Absorption Enhancement of Amorphous Silicon Film Coupled with Metal Nanoshells