Effects of Surface Plasmon on the Photoluminescence Emission Decay Time of Tb~(3+) Doped SiNx Films

Deren Yang

2008-01-01

Abstract:The motivation for developing silicon-based light emitters is the requirement of tiny light sources in the visible regions,which can be directly integrated into silicon chips for the analysis of different biological substances,for silicon optical couplers,and high-resolution low-cost micro displays.It is believed that the development of integrate circuit will open a door for the continuous increasing of silicon-based light emitters predicted by Moore's law.Many efforts,such as bulk silicon,Si nanocrystals,and rare earth(RE) coupled Si nanocrystals have been extensively studied.Weighing the studies mentioned above,rare RE-doped silicon light emitter,which has intense light emission even at room temperature,is a better candidate.In this report,the photoluminescence of Tb implanted SiNx films grown by plasma-enhanced chemical vapor deposition(PECVD) was investigated.And the effects of surface plasmon on the photoluminescence emission decay time of Tb3+ doped SiNx films with different sized of Ag islands films were investigated.The photoluminescence(PL) and time resolved photoluminescence(TRPL)at room temperature show that the PL of SiNx∶Tb3+ film has the highest intensity at 547 nm with corresponding emission decay time 708 ms.After sputtering silver films,the TRPL of Tb3+ ions shows the decrease of the emission decay time.An increase of emission decay time was observed due to the increased size of Ag islands after rapid thermal processing(RTP).We find good agreement between our experimental results and those predicted by a classical theory,which assumes the emitter to be a damped oscillating electric dipole.Therefore,it allows one to be confident that the silver islands do altered the emission decay time which correspondingly improve the internal quantum efficiency of the SiNx∶Tb3+.