Enhancement of Light-Extraction Efficiency of SiNx Light Emitting Devices Through a Rough Ag Island Film

Feng Wang,Dongsheng Li,Deren Yang,Duanlin Que
DOI: https://doi.org/10.1063/1.3678632
IF: 4
2012-01-01
Applied Physics Letters
Abstract:Based on an ITO/Ag/SiNx/p+-Si/Al structure, a significant enhancement of the external quantum efficiency was achieved compared with the device without Ag island film. Analysis showed that the increase of the light-extraction efficiency resulted from the surface roughening of ITO electrode has a main contribution to this enhancement. The increase of the internal quantum efficiency induced by the enhancement of spontaneous emission rate and the carrier injection level also has an instructive contribution. Our results demonstrate that localized surface plasmons enhanced SiNx-based light emitting devices show great promise for the development of efficiency Si-based optical device.
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