Abstract:Er-doped Si-rich SiO2 (SRSO:Er) films have been deposited on n+-Si substrates by the magnetron sputtering technique, and both photoluminescence (PL) and electroluminescence (EL) at 1.54 μm have been observed from the films at room temperature. Dependence of PL and EL intensities on the excess-Si content and annealing temperature has been studied. It is found that proper Si content and annealing temperature can evidently enhance EL intensity. An SRSO:Er film with 20% excess Si (area ratio of the Si target to the whole target) had more intense EL than a SiO2:Er film without excess Si, both annealed at 800°C, by a factor of 5. This fact clearly demonstrates that energy coupling between Si nanometer particles and Er3+ ions also exists in the EL process as well as in the PL process. Experimental results also indicate that crystallization is not a prerequisite for NSPs enhancing luminescence in SRSO:Er films. The PL and EL spectra of the SRSO:Er films have much broader full widths at half maximum (FWHM, ∼60 nm) than those of the other Er-doped materials reported. This wide FWHM can perhaps be used in wavelength division multiplexing in optical communication in future.

PHOTOLUMINESCENCE PROPERTIES OF <font>Er</font> DOPED INTO <font>C</font>-RICH <font>SiC</font> NANOPARTICLE FILMS

Photoluminescence properties of Er doped into C-rich SiC nanoparticle films

Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS

Photo- and electro-luminescence at 1.54 μm from Er3+ in SiC:Er2O3 films and structures

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers

Photoluminescence and Microstructure of Er-Doped A-Si∶h,o Deposited by PECVD *

PHOTOLUMINESCENCE OF Er IN SiO x

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING