Abstract:Enhanced 395nm ultraviolet photoluminescence (PL) has been obtained from the SiO2/Ge SiO2/ SiO2 sandwiched structure. As light source for optical data storage system, this structure will be very useful in optoelectronic integration. Simultaneously, infrared light emission peaked at 780nm was also observed in this novel structure. In this paper, we discussed the origin of the infrared PL in terms of infrared spec- troscopy (FT-IR) and FL excitation (PLE) spectra. The constancy of the 780nm PL band with annealing temperature does suggest that it can not arise from both the quantum confinement on Ge, Si nanocrystals and the oxygen deficient defects of Ge and Si, because PL from these radiative centers all have peak shifts to some extent. The experimental results from FT-IR strongly suggest that the Ge-O-Ge vibration intensity and the 780nm PL intensity have a similar behavior with annealing temperature. So it is reasonable to be- lieve that the infrared PL band is very related to Ge oxides. Further PLE examination results indicate that it has the similar excitation process to the 395nm ultraviolet PL which comes from TⅡ'(T)→S0 optical transitions in GeO color centers, which has been confirmed by many research groups. So we believe that the 780nm PL should also originate from GeO color centers. The schematic diagram of electronic states of GeO molecule is presented to describe the carriers' excitation and recombination process in this kind of centers. The TⅡ'→S0 optical transitions in GeO color center is responsible for the infrared PL. In GeO molecules, all radiative transitions are intramolecular. Thus the PL bands from the GeO color centers are hardly influ- enced by the SiO2 network. That is why 780nm infrared PL has no wavelength change with different annealing temperature. Our work paves the way for the sandwiched structure's device applications.

PHOTOLUMINESCENCE OF Er IN SiO x

Visible and infrared photoluminescence from Er-doped SiOx

Study on Photoluminescence Characteristics of SiOx: Er Thin Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Origin of Infrared Photoluminescence from SiO_2/Ge: SiO_2/SiO_2 Sandwiched Structure [J]

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Photoluminescence and Microstructure of Er-Doped A-Si∶h,o Deposited by PECVD *

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition

Preparation And Characterization Of Erbium Doped Sol-Gel Silica Glasses