Abstract:Er doped Si/Al2O3 multilayer films were grown by pulsed laser deposition(PLD)and post annealed by RTA.The room temperature Er-related PL spectra were observed under excitation of the Ar+ 476 nm laser which is not Er3+ resonant pumping.This means that in the films there are indirect excitations to Er3+ luminescence and the nanosilicons produced by RTA must be sensitisers.By analyzing the PL peak intensity at 1.54 μm as a function of annealing temperature,it is found that the film annealed at 700 ℃ gets the strongest photoluminescence which is 39 times higher than that of the Er doped Al2O3 reference film produced by the same method.Furthermore,the Raman scattering spectra shows that in the film annealed at 700 ℃ the silicon is still amorphous,but therein some Si nanoclusters which are effective sentitisers to Er3+ luminescence have already appear.Then,after the films are annealed at temperatures above 700 ℃,the Si-nanoclusters crystallize increasingly well and meanwhile the sizes of Si-nanocrystals become bigger and bigger leading to the number of effective sensitisers decrease.This phenomenon causes the decline of Er3+ PL intensity.It shows that the optimal annealing temperature is 700 ℃ which is far below the annealing temperature required for Er-doped samples containing Si-nanocrystal.

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Structural and Photoluminescence Properties of Er2O3Films by Sol-Gel Method

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Room temperature photoluminescence from Zr4+-doped sol–gel silica

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Fabrication and Characterization of Er Silicates on SiO2/Si Substrates

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

[Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Film and Er-doped Silicon-Rich Silicon Nitride Film and Its Annealing Behavior].

PHOTOLUMINESCENCE OF Er IN SiO x

Study on Photoluminescence Characteristics of SiOx: Er Thin Films

Preparation And Characterization Of Erbium Doped Sol-Gel Silica Glasses