Abstract:Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.

Fabrication and Characterization of Er Silicates on SiO2/Si Substrates

Phase Transformation and Photoluminescence Properties of Er Silicate Films by Sol-Gel Method

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Preparation And Characterization Of Erbium Doped Sol-Gel Silica Glasses

1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition

PHOTOLUMINESCENCE OF Er IN SiO x

Structural and Photoluminescence Properties of Er2O3Films by Sol-Gel Method

Study on Photoluminescence Characteristics of SiOx: Er Thin Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Visible and infrared photoluminescence from Er-doped SiOx

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Thermal Stability of Er2o3 Thin Films Grown Epitaxially on Si Substrates

Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers