Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Thermal Stability of Er2o3 Thin Films Grown Epitaxially on Si Substrates

Thermal Stability of Er2O3-Al2O3 Thin Films Grown on Si Substrates

Epitaxial Growth of Er2o3 Films on Si(001)

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates

Investigation on initial growth of Er2O3 films on Si(001)

Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

Microstructure of Epitaxial Er2o3 Thin Film on Oxidized Si(111) Substrate

Thermal Stability of Mg 2 Si Epitaxial Film Formed on Si (111) Substrate by Solid Phase Reaction

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Temperature Effects on the Growth and Electrical Properties of Er2o3 Films on Ge Substrates

Epitaxial Growth of Er2O3 Films by MBE

Surface and Interface of Er2O3 Films Epitaxially Grown on Si Substrate:An X-Ray Photoelectron Spectroscopy Study

In Situ Photoemission Study of Interface and Film Formation During Epitaxial Growth of Er2O3 Film on Si(001) Substrate

Structure and Thermal Stability of (zr0.6al0.4)o1.8 Thin Film on Strained SiGe Layer

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Superior Electrical Properties of Crystalline Er2O3 Films Epitaxially Grown on Si Substrates

In situ photoemission study on initial growth of Er2O 3 films on Si(001)

Influence of Growth Parameters on the Microstructures of Erbium Films Deposited on Si(111) Substrates

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

The Thermal Stability of Zirconium Aluminate High-K Film on Strained SiGe Layer