Thermal Stability of Mg 2 Si Epitaxial Film Formed on Si (111) Substrate by Solid Phase Reaction

Guo Yang
DOI: https://doi.org/10.1088/1674-1056/18/7/078
2009-01-01
Abstract:A single crystalline Mg2Si film was formed by solid phase reaction (SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s), which was enhanced by post annealing from room temperature to 100 degrees C in a molecular beam epitaxy (MBE) system. The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300 degrees C, 450 degrees C and 650 degrees C, respectively. The Mg2Si film stayed stable until the annealing temperature reached 450 degrees C then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.
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