Abstract:In this work, in silico methods are used to study the temperature effect of the emission properties, including the electron work function, of quasi 2D glass-like carbon (GLC) films deposited on few/multi-layer Si/SiO2 substrates of two types. The equilibrium configuration of the structures under study at different temperatures is established by molecular dynamics (MD) method using reactive force field (ReaxFF) due to the polyatomic nature of supercells. The electronic structure is determined using the self-consistent charge density-functional based tight-binding (SCC-DFTB) method. The temperature range under consideration is 50-1000 K. The effect of one sub-strate layer and several substrate layers on the electronic structure and emission properties of GLC is considered. In the case of one layer of Si and SiO2, in fact, the functionalization of the GLC film occurs. This leads to a decrease in the work function by -6 % and -21 %, respectively, at a temperature of 300 K. As the temperature increased to 1000 K, the work function of the GLC with one SiO2 layer further decreased by -7 %. An increase in the substrate thickness to five Si layers and two SiO2 layers leads to a decrease in the work function by 7.3 % and 20.5 %, respectively. An increase in temperature leads to a change in the work function of the GLC with five Si substrate layers and two SiO2 layers by 0.2 % and 3.8 %, respectively.

Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates

Influences of Pressure and Substrate Temperature on Epitaxial Growth of Γ-Mg 2 SiO 4 Thin Films on Si Substrates

EXPERIMENTAL STUDY ON THE PHASE RELATIONS OF THE SYSTEM Mg2SiO4-MgAl2O4 AT HIGH PRESSURE AND HIGH TEMPERATURE

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Epitaxial Mg2SiO4 Thin Films with a Spinel Structure Grown on Si Substrates

GROWTH OF MgO THIN FILMS ON Si SUBSTRATES BY MAGNETRON SPUTTERING

Influence of Different Substrates on MgTiO_3-CaTiO_3 Thin Films Prepared by RF Sputtering

Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-Sic Thin Films by Mbe on Si(111) Substrate

Influence of Substrate Temperature on the Growth of Μc-Sige Thin Film

Characterizations of Cubic ZnMgO Films Grown on Si(111) at Low Substrate Temperature

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

Thermal Stability of Mg 2 Si Epitaxial Film Formed on Si (111) Substrate by Solid Phase Reaction

Effect of Substrate Temperature on the Growth of 6H-SiC Thin Films on Al_2O_3(0001) Surface

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Effects of Carbonization and Substrate Temperature on the Growth of 3c–sic on Si(111) by SSMBE

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Influence of Substrates on the Microstructure and Electrical Properties of Si/Mo Thin Films