GROWTH OF MgO THIN FILMS ON Si SUBSTRATES BY MAGNETRON SPUTTERING

ZHao SHao-Qi,Kang Lin,Wu Pei-Heng,Ye Yu-Da
DOI: https://doi.org/10.3969/j.issn.1000-3258.2006.01.008
2006-01-01
Abstract:We deposited MgO thin films on Si(100) substrates using rf magnetron sputtering method. X-ray diffraction results demonstrated that we obtained two types of MgO with different lattice structures, they are, traditional MgO with a lattice constant of 0.421nm and a new uype of MgO with a lattice constant of 0.812nm. We found that high gas pressure and high substrate temperature are in favor of the growth of this new MgO films. At high gas pressure and high substrate temperature, we obtained high quality epitaxial MgO thin films with this new lattice structure, which showed good 4-fold symmetry. And the surface morphology of such thin films were investigated by atom force microscopy.
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