Abstract:Strained GexSi1-x/Si superlattices with Ge content of 0.48 and 0.49 grown by MBE at 420°C (sample A) and 570°C (sample B) were annealed and studied by X-ray diffraction, Raman scattering and TEM. The cross section TEM image of the samples before annealing showed that the growth of sample A was two-dimensional, but for sample B, the growth of the GexSi1-x layer was three-dimensional. By the X-ray diffraction spectra before and after annealing for samples A and B, the strain relaxations from X-ray diffraction measurements were 27% and 35% for samples A and B, respectively. This difference might be from the three-dimensional growth of sample B, in which the strain was stronger than that in sample A. Raman scattering measurements showed that the Ge-Ge peak and the Ge-Si peak shifted towards the lower energy after annealing, while the Si-Si peak shifted towards the higher energy. The reason for the shift of these peaks could be explained by the common contribution of the strain relaxation and the internal diffusion of Ge atoms into the Si layer. In addition, the behavior of the strained GexSi1-x/Si superlattice annealed by rapid thermal annealing technology was also studied. A sample of superlattice with a Ge content of 0.46 was rapidly thermal annealed at the temperature range of 600 to 1000°C and at each temperature the sample was annealed twice for 40 s each time. From X-ray diffraction measurements it could be found that as the annealing temperature increased from 600 to 900°C, the strain relaxation would increase from 19% up to 57%. As the sample was annealed at 1000°C, no satellite peaks were in the X-ray diffraction spectra and no multilayer structure could be observed in the cross section TEM image, that is, in the sample the GeSi layers were completely mixed up with the Si layers.

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Study of Si and Ge growth on Si(100) surface

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Influence of Substrate Temperature on the Growth of Μc-Sige Thin Film

Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates

Temperature Effects on the Growth and Electrical Properties of Er2o3 Films on Ge Substrates

An investigation on the thermal stability of the GexSi1-x⧸Si superlattice grown by MBE

Island-growth of SiCGe films on SiC

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Influences of Pressure and Substrate Temperature on Epitaxial Growth of Γ-Mg 2 SiO 4 Thin Films on Si Substrates

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Effect of Buffer Temperature on Epilayer Morphology for GaN on Si(111)

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

The Property of Si／SiGe／Si Heterostructure During Thermal Budget Characterized by HRXRD

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Effect of A Ge Interlayer on the High-Temperature Behavior of Nisi Films

Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer