Abstract:The formation of NiSi1−xGex on Si1−xGex(111) substrates with x=0, 0.05, and 0.20 at an annealing temperature of 500°C has been studied by x-ray diffraction, transmission electron microscopy, and pole-figure measurements. NiSi formed preferentially oriented on Si, with (100), (001), and (102) parallel to Si(111) and NiSi[010]‖Si⟨211⟩. In NiSi0.95Ge0.05, (001) and (102) maintained their preferential orientations, whereas NiSi0.95Ge0.05(100) was rotated by 30°, so that NiSi0.95Ge0.05[010]‖Si0.95Ge0.05⟨011⟩. An epitaxial alignment in the form of a double axiotaxy, with NiSi0.95Ge0.05(2±11) as well as (20−2)‖Si0.95Ge0.05{220}, simultaneously with NiSi0.95Ge0.05(0±13) as well as (020)‖Si0.95Ge0.05{022}, caused NiSi0.95Ge0.05(100) to tilt over the range of 0°–7.5°. The Ge addition also enhanced the preferentially oriented structure by reinforcing NiSi0.95Ge0.05(123)‖Si0.95Ge0.05(111) through the axiotaxial alignments, NiSi0.95Ge0.05(211) and (−112)‖Si0.95Ge0.05{220}. Observed was also the presence of NiSi0.95Ge0.05(011)‖Si0.95Ge0.05(111), with NiSi0.95Ge0.05[100]‖Si0.95Ge0.05⟨011⟩. In the case of NiSi0.80Ge0.20, the preferential orientations were sharply reduced in favor of NiSi0.80Ge0.20(100)‖Si0.80Ge0.20(111), with NiSi0.80Ge0.20[010]‖Si0.80Ge0.20⟨011⟩ and the 30° rotation thus preserved. The observed Ge influence is shown to be consistent with a model suggested earlier for Si1−xGex(001) substrates, which is based on the nonexistence of Ni(Si1−xGex)2 for all except the smallest values of x. High-resolution transmission electron microscopy was used to show that the surface steps typical of molecular-beam-deposited epitaxial Si1−xGex substrate films do not influence the growth of the NiSi1−xGex.

Effect of A Ge Interlayer on the High-Temperature Behavior of Nisi Films

Influence of a Si Layer Intercalated Between Si0.75Ge0.25 and Ni on the Behavior of the Resulting NiSi1−uGeu Film

The Effects of Extended Heat Treatment on Ni Induced Lateral Crystallization of Amorphous Silicon Thin Films

Effect of erbium interlayer on nickel silicide formation on Si(100)

Pt interlayer effects on Ni germanosilicide formation and contact properties

Effect of Pt Interlayer on Thermal Stability of NiSi Films

Formation of NiSiGe on Compressivly Strained SiGe Thin Layers

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Investigation of Ni Reaction with Sputtered Amorphous Sige Thin Film on Sio2 Substrate

Morphological And Phase Stability Of Nickel-Germanosilicide On Si1-Xgex Under Thermal Stress

Enhanced Phase Stability and Morphological Stability of Ni(Si,Ge) on Strained Si0.8Ge0.2

Improvement Of The Thermal Stability Of Nisi Films By Using A Thin Pt Interlayer

Influence of Germanium on the Formation of NiSi1−xGex on (111)-Oriented Si1−xGex

Film Thickness Dependence of the Nisi-To-Nisi2 Transition Temperature in the Ni/Pt/Si(100) System

Morphological Instability of NiSi1−uGeu on Single-Crystal and Polycrystalline Si1−xGex

Comparison of the Thermal Stabilities of Nisi Films in Ni/Si, Ni/Pd/Si and Ni/Pt/Si Systems

Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts