Abstract:The formation of NiSi1−xGex on Si1−xGex(111) substrates with x=0, 0.05, and 0.20 at an annealing temperature of 500°C has been studied by x-ray diffraction, transmission electron microscopy, and pole-figure measurements. NiSi formed preferentially oriented on Si, with (100), (001), and (102) parallel to Si(111) and NiSi[010]‖Si⟨211⟩. In NiSi0.95Ge0.05, (001) and (102) maintained their preferential orientations, whereas NiSi0.95Ge0.05(100) was rotated by 30°, so that NiSi0.95Ge0.05[010]‖Si0.95Ge0.05⟨011⟩. An epitaxial alignment in the form of a double axiotaxy, with NiSi0.95Ge0.05(2±11) as well as (20−2)‖Si0.95Ge0.05{220}, simultaneously with NiSi0.95Ge0.05(0±13) as well as (020)‖Si0.95Ge0.05{022}, caused NiSi0.95Ge0.05(100) to tilt over the range of 0°–7.5°. The Ge addition also enhanced the preferentially oriented structure by reinforcing NiSi0.95Ge0.05(123)‖Si0.95Ge0.05(111) through the axiotaxial alignments, NiSi0.95Ge0.05(211) and (−112)‖Si0.95Ge0.05{220}. Observed was also the presence of NiSi0.95Ge0.05(011)‖Si0.95Ge0.05(111), with NiSi0.95Ge0.05[100]‖Si0.95Ge0.05⟨011⟩. In the case of NiSi0.80Ge0.20, the preferential orientations were sharply reduced in favor of NiSi0.80Ge0.20(100)‖Si0.80Ge0.20(111), with NiSi0.80Ge0.20[010]‖Si0.80Ge0.20⟨011⟩ and the 30° rotation thus preserved. The observed Ge influence is shown to be consistent with a model suggested earlier for Si1−xGex(001) substrates, which is based on the nonexistence of Ni(Si1−xGex)2 for all except the smallest values of x. High-resolution transmission electron microscopy was used to show that the surface steps typical of molecular-beam-deposited epitaxial Si1−xGex substrate films do not influence the growth of the NiSi1−xGex.

Solid-Phase Reaction of Ni with Amorphous SiGe Thin Film on SiO2

Investigation of Ni Reaction with Sputtered Amorphous Sige Thin Film on Sio2 Substrate

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Investigation of Ni reaction with amorphous SiGeC thin film

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Ni Induced Crystallization of Amorphous SiGe

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Formation of NiSiGe on Compressivly Strained SiGe Thin Layers

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Influence of a Si Layer Intercalated Between Si0.75Ge0.25 and Ni on the Behavior of the Resulting NiSi1−uGeu Film

Morphological And Phase Stability Of Nickel-Germanosilicide On Si1-Xgex Under Thermal Stress

Crystallization of Nisix in A Body-Centered Cubic Structure During Solid-State Reaction Between an Ultrathin Ni Film and Si(001) Substrate at 150-350 Degrees C

Morphological Instability of NiSi1−uGeu on Single-Crystal and Polycrystalline Si1−xGex

Study of Ni/Si(1 0 0) solid-state reaction with Y addition

Influence of Germanium on the Formation of NiSi1−xGex on (111)-Oriented Si1−xGex

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Enhanced Phase Stability and Morphological Stability of Ni(Si,Ge) on Strained Si0.8Ge0.2

Study of Ni/Si(100) solid-state reaction with Y addition

Solid Phase Reaction of Ni/Pd/Si(100) and Enhancement of NiSi Thermal Stability Study

Comparison between the solid state reaction of ultrathin Ni and Ni/Ti with Si nanowire on silicon-on-insulator

Effect of A Ge Interlayer on the High-Temperature Behavior of Nisi Films