Influence of a Si Layer Intercalated Between Si0.75Ge0.25 and Ni on the Behavior of the Resulting NiSi1−uGeu Film

J Seger,T Jarmar,F Ericson,U Smith,J Hallstedt,ZB Zhang,SL Zhang

DOI: https://doi.org/10.1063/1.1814168

IF: 2.877

2004-01-01

Journal of Applied Physics

Abstract:The interaction of Ni films with epitaxially grown Si-capped and not capped Si0.75Ge0.25 layers on Si(100) at 500°C leads to the formation of NiSi1−uGeu films as a bilayer NiSi on NiSi0.75Ge0.25 with a rather clear compositional boundary. In the absence of a Si cap at the surface, NiSi0.75Ge0.25 is formed on NiSi. Epitaxy of NiSi on NiSi0.75Ge0.25, and vice versa, occurs across the compositional boundary. The crystallographic orientation of the NiSi1−uGeu films is strongly affected by the initial layer thicknesses and the layer sequence. Without a Si cap, the NiSi1−uGeu films show an increased fiber texture with increasing Si0.75Ge0.25 thickness. In the presence of a Si cap, on the other hand, the texture collapses into a random orientation already for thin caps. Rapid diffusion of Ge at 500°C results in the presence of some Ge at the NiSi∕Si interface for a NiSi0.75Ge0.25∕NiSi∕Si structure. This diffusion is accompanied by an increased roughness at the NiSi∕Si interface, as compared to the quite flat NiSi∕Si interface in the absence of Ge. For thin Si caps, severe interface roughening with thick NiSi0.75Ge0.25 grains protruding deeply into the remaining Si0.75Ge0.25 is observed.