Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts

Isheden Christian,Seger Johan,Radamson Henry H.,Zhang Shi Li,Östling Mikael

DOI: https://doi.org/10.1557/proc-745-n4.9

2002-01-01

MRS Proceedings

Abstract:The formation of Ni germanosilicides during solid-state interaction between Ni and heavily B-doped strained epitaxial Si 1−x Ge x films with x=0.18, 0.32 and 0.37 is studied. No NiSi 2 is found in these samples even after annealing at 850 oC, which can be compared to the formation of NiSi 2 at 750 °C on Si(100). Resistance and diffraction studies for the Si 0.82 Ge 0.18 sample indicate that NiSi 0.82 Ge 0.18 forms and the NiSi 0.82 Ge 0.18 /Si 0.82 Ge0.18 structure is stable from 400 to 700 °C. For the NiSi 1−u Ge u formed in all Si 1−x Ge x samples, where u can be different from x, a strong film texturing is observed. When the Ge fraction is increased from 18 at.% to 32–37 at.%, the morphological stability of the film is degraded and a substantial increase in sheet resistance occurs already at 600 °C. The contact resistivity for the NiSi 0.8 Ge 0.2 /Si 0.8 Ge 0.2 interface formed at 550 °C is determined as 1.2×10 −7 Ωcm 2 , which satisfies the ITRS contact resistivity requirement for the 70 nm technology node.