Abstract:The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. The ultimate goal of this thesis is to integrate metallic Ni1-xPtx silicide (x=0~1) source/drain into SB-MOSFET and SB-FinFET, with an emphasis on both material and processing issues related to the integration of Ni1-xPtx silicides towards competitive devices. First, the effects of both carbon (C) and nitrogen (N) on the formation and on the Schottky barrier height (SBH) of NiSi are studied. The presence of both C and N is found to improve the poor thermal stability of NiSi significantly. The present work also explores dopant segregation (DS) using B and As for the NiSi/Si contact system. The effects of C and N implantation into the Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1-0.2 eV for both conduction polarities. In order to unveil the mechanism of SBH tuning by DS, the variation of specific contact resistivity between silicide and Si substrates by DS is monitored. The formation of a thin interfacial dipole layer at silicide/Si interface is confirmed to be the reason of SBH modification. Second, a systematic experimental study is performed for Ni1-xPtx silicide (x=0~1) films aiming at the integration into SB-MOSFET. A distinct behavior is found for the formation of Ni silicide films. Epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 oC when the thickness of deposited Ni (tNi) <4 nm. Polycrystalline NiSi films form and tend to agglomerate at lower temperatures for thinner films for tNi≥4 nm. Such a distinct annealing behavior is absent for the formation of Pt silicide films with all thicknesses of deposited Pt. The addition of Pt into Ni supports the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability. Finally, three different Ni-SALICIDE schemes towards a controllable NiSi-based metallic source/drain process without severe lateral encroachment of NiSi are carried out. All of them are found to be effective in controlling the lateral encroachment. Combined with DS technology, both n- and p-types of NiSi source/drain SB-MOSFETs with excellent performance are fabricated successfully. By using the reproducible sidewall transfer lithography (STL) technology developed at KTH, PtSi source/drain SB-FinFET is also realized in this thesis. With As DS, the characteristics of PtSi source/drain SB-FinFET are transformed from p-type to n-type. This thesis work places Ni1-xPtx (x=0~1) silicides SB-MOSFETs as a competitive candidate for future CMOS technology.

Nickel-Based Contact Metallization For Sige Mosfets: Progress And Challenges

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on $\Hbox{si}_{1-X}\hbox{ge}_{x}$ Epilayer on Si Substrates

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Self-aligned Silicides for Ohmic Contacts in Complementary Metal–oxide–semiconductor Technology: TiSi2, CoSi2, and NiSi

Morphological And Phase Stability Of Nickel-Germanosilicide On Si1-Xgex Under Thermal Stress

Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization

Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon–Carbon Source/Drain

Kinetics and Morphology of Ni1-xPtx-silicide Epitaxy on Si(001)

Pt interlayer effects on Ni germanosilicide formation and contact properties

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

Si- and Ge-Based Electronic Devices

Interaction of NiSi with dopants for metallic source/drain applications

Novel Nickel-Alloy Silicides For Source/Drain Contact Resistance Reduction In N-Channel Multiple-Gate Transistors With Sub-35nm Gate Length

Kinetic Manipulation of Silicide Phase Formation in Si Nanowire Templates.

Alloying Effects in Ni Silicide for CMOS Applications

On Different Process Schemes for MOSFETs with a Controllable NiSi-Based Metallic Source/Drain

Impact of Various Silicide Techniques on SiGe Source–drain Series Resistance and Mobility of Pmosfets

Phase-controlled Synthesis of Nickel Silicide Nanostructures