Abstract:Publication date: 31 July 2023 Source: Key Engineering Materials Vol. 950 Author(s): Nian Nian Ge, Cai Ping Wan, Zhi Jin, Heng Yu Xu Investigation of the reaction kinetics between Ni film and 4H-SiC substrate at temperatures which are usually used for ohmic contacts formation provides valuable insights into the studies on fundamental properties of ohmic contacts to 4H-SiC, which are limiting the switching speed, energy efficiency and high-temperature thermal stability of SiC MOSFETs. High Resolution Scanning Electron Microscope (HRSEM) and Raman spectroscopy were used to elaborately characterize the interfacial reaction products under various annealing conditions and to assess the thicknesses of reaction diffusion layers. The square of reaction layer thicknesses versus time followed parabolic law and the apparent active energy of interfacial reaction was derived as 1.5 eV (145 kJ/mol). For Raman spectra, the intensity ratio of two Raman peaks for each nickel silicide detected varied monotonically with temperature in the same trend, indicating that crystal quality of nickel silicide film was improved with annealing temperature rising at micron scale. The red-shift of Ni2Si peak locations at about 140 cm-1 with temperature was suggestive of the polycrystalline Ni2Si film with weaker stress/strain status. Moreover, the in-plane size of graphite cluster aggregating at top surface increased with annealing temperature rising until about 1000°C, which is detrimental to the ohmic contacts from the perspective of device applications.

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

Pt interlayer effects on Ni germanosilicide formation and contact properties

Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni–Si solid-state reaction

The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes

Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

The Thermal Stability Study and Improvement of 4H-Sic Ohmic Contact

Formation of Ni Mono-Germanosilicide on Heavily B-doped Epitaxial SiGe for Ultra-Shallow Source/drain Contacts

Study of nickel silicide formation on Si(1 1 0) substrate

Morphological And Phase Stability Of Nickel-Germanosilicide On Si1-Xgex Under Thermal Stress

Study of Nickel Silicide Formation on Si(110) Substrate

Nickel-Based Contact Metallization For Sige Mosfets: Progress And Challenges

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Thermal Stability and Interface Improvement of Thin Nisige by C+ Ion Implantation

Electrical Properties Study of Ni (Pt)-Silicide/si Contacts

Thermal Stability of Electrical Characteristics of Nickel Silicide Metal Gate

I – V – T Studies on Ni-silicide/n-Si(100) Contacts Formed by Ti–Ni–Si Solid State Reaction

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7 Contact with Ultralow Contact Resistivity

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

Characterization of Ni(Si,Ge) Films on Epitaxial SiGe(100) Formed by Microwave Annealing