Abstract:The realization of ohimic contact to n-GaN is usually achieved by using Ti/Al bilayer electrodes with high temperature annealing. Nevertheless, the process of high temperature annealing may destruct the (electronic) structure of devices, such as quantum well and superlattice structure. The ultimate objective of this research work is to obtain low resistance ohimic contact to n-GaN without high temperature annealing, thus (avoiding) the destruction of electronic structure effectively. In the research both nonalloyed condition and low temperature annealing are applied. Under nonalloyed condition, we firstly use alloyed TiAl_3 as contact electrode material directly on n-GaN with carrier concentration of 2×10~(18) cm~(-3). Compared with conventional Ti/Al bilayer structure, alloyed TiAl_3 structure facilitates the realization of nonalloyed n-type ohmic contact. However, with annealing at 500 ℃, the contact behavior of Ti/Al bilayer is improved rapidly and achieves ohmic, which is lower than the temperature assumed in some papers. After applying RIE process, both Ti/Al bilayer and TiAl_3 alloyed electrodes behave ohmic, which indicates that the surface of GaN is cleaning, thus intimate contact of Ti and GaN is vital to (achieve) ohmic contact to n-GaN. In the further experiment, Ti/TiAl_3 bilayer structure is introduced to compare with TiAl_3 alloyed structure. Both of the two structures behave ohmic with RIE process, yet TiAl_3 alloyed shows lower contact resistance, and excess Ti has no obvious effect to contact behavior under nonalloyed condition. After annealing with different temperature, Ti/TiAl_3 bilayer structure tends to form an ohmic contact with lower contact resistance. It proves that excess Ti is activated to form ohmic contact at high temperature annealing. Further analysis implies both of the nitrogen vacancies and TiAl_3 mechanisms play a critical role to form a low contact resistance ohmic contact to n-GaN, under the condition of nonalloyed or low annealing temperature. Accordingly, based on alloyed TiAl_3 structure, Ti/TiAl_3/Ni/Au structure is designed, which decreases the contact resistance significantly, and the specific contact resistance of 3×10~(-5) Ω·cm~2 is obtained with CTLM measurement.The introduction of TiAl_3 alloyed material can make a role as high temperature annealing in the aspect of forming TiAl_3 at the interface. With a certain thickness ratio, Ti/TiAl_3 can achieved low ohmic contact with low temperature annealing. Therefore, TiAl_3 alloyed will be promising in the application field of photoelectron and micro-electron devices that require strict temperature conditions.

Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7 Contact with Ultralow Contact Resistivity

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ Cm2 Contact Resistivities to P-Sige

Role of ultra-thin tungsten interlayer in blocking nitrogen diffusion and reducing specific contact resistivity in titanium/n+-Si ohmic contacts

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

The Thermal Stability Study and Improvement of 4H-Sic Ohmic Contact

Low Contact Resistivity of Ti/TiN/Al for NiSi2 on Epitaxial Si:P Structure at Full Low-Temperature Process below 450 °C

Temperature Dependent Characteristics of Ti/Al/Ni/Au Ohmic Contact on Lattice-Matched In0.17Al0.83N/GaN Heterostructures

Ti/Al/Pt/Au and Al Ohmic Contacts on Si-Substrated Gan

Characterization of thermal stability of Ni(SiGe)/n-SiGe contact formed by isothermal annealing

Ti and NiPt/Ti Liner Silicide Contacts for Advanced Technologies

Ohmic Contact Formation of Ti/Al/Ni/Au to N-Gan by Two-Step Annealing Method

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Pt interlayer effects on Ni germanosilicide formation and contact properties

Effect of the Deposition Sequence of Ti and W on the Ni-Based Ohmic Contacts to N-Type 4H-Sic

Realization of Nonalloyed TiAl3 and Ti/TiAl3 Ohmic Contact to N-Gan

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN

Effect of graphite related interfacial microstructure created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC

Ohmic Contact Performance Between Ti/Al/Ti/Au and AlGaN

Insertion of Hafnium Interlayer to Improve the Thermal Stability of Ultrathin TiSi x in TiSi x /n + -Si Ohmic Contacts