Abstract:Publication date: 31 July 2023 Source: Key Engineering Materials Vol. 950 Author(s): Nian Nian Ge, Cai Ping Wan, Zhi Jin, Heng Yu Xu Investigation of the reaction kinetics between Ni film and 4H-SiC substrate at temperatures which are usually used for ohmic contacts formation provides valuable insights into the studies on fundamental properties of ohmic contacts to 4H-SiC, which are limiting the switching speed, energy efficiency and high-temperature thermal stability of SiC MOSFETs. High Resolution Scanning Electron Microscope (HRSEM) and Raman spectroscopy were used to elaborately characterize the interfacial reaction products under various annealing conditions and to assess the thicknesses of reaction diffusion layers. The square of reaction layer thicknesses versus time followed parabolic law and the apparent active energy of interfacial reaction was derived as 1.5 eV (145 kJ/mol). For Raman spectra, the intensity ratio of two Raman peaks for each nickel silicide detected varied monotonically with temperature in the same trend, indicating that crystal quality of nickel silicide film was improved with annealing temperature rising at micron scale. The red-shift of Ni2Si peak locations at about 140 cm-1 with temperature was suggestive of the polycrystalline Ni2Si film with weaker stress/strain status. Moreover, the in-plane size of graphite cluster aggregating at top surface increased with annealing temperature rising until about 1000°C, which is detrimental to the ohmic contacts from the perspective of device applications.

Effect of graphite related interfacial microstructure created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC

The Thermal Stability Study and Improvement of 4H-Sic Ohmic Contact

A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp 2 -carbon

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Ohmic Contact Formation of Ti/Al/Ni/Au to N-Gan by Two-Step Annealing Method

Fabrication of Ohmic Contact on the Carbon-Terminated Surface of N-Type Silicon Carbide

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide

Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Influence Of Annealing Temperature On Film Morphology And Tribological Performance Of Tisin-Ag Coating

Thermal Stability of TiN/Ti/p+-Si0.3Ge0.7 Contact with Ultralow Contact Resistivity

High-temperature Annealing Effects on Epitaxial TiN Films on 4H-Sic

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Investigations of the effect of Si addition on graphite elimination and the oxidation behavior of SiC joint using Inconel 625 powder filler

Ti/Ni/Ti/Au Ohmic contact and Schottky transformation to Al-doped ZnO thin films

Microstructure Evolution of Oxidized Ni/Au Ohmic Contacts to P-Gan Studied by X-Ray Diffraction

Annealing Effect On The Microstructure Modification And Tribological Properties Of Amorphous Carbon Nitride Films

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN

Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer

Annealing Nano-to-micro Contacts for Improved Contact Resistance