Correlation of Contact Resistance with Metal Diffusion for Oxidized Au/Ni/p-GaN Contacts Studied Using Rutherford Backscattering Spectroscopy
C. Y. Hu,Z. B. Ding,Z. X. Qin,Z. Z. Chen,Z. J. Yang,T. J. Yu,X. D. Hu,S. D. Yao,G. Y. Zhang
DOI: https://doi.org/10.1088/0268-1242/21/9/009
IF: 2.048
2006-01-01
Semiconductor Science and Technology
Abstract:The temperature- and time-dependent diffusion behaviours of oxidized Au/Ni/p-GaN ohmic contacts were studied with Rutherford backscattering spectroscopy/channelling (RBS/C). It was found that, after annealing at 450 degrees C, the Au diffused into the electrodes and contacted to the p-GaN and the O diffused into the electrodes to form NiO. Both of these processes are believed to be responsible for the sharp decrease in the specific contact resistance (rho(c)) at 450 degrees C. At 500 degrees C, the O diffused deeper into the interface. As a result, the reached the lowest value at this temperature. The influence of the annealing time was also investigated. It was found that, at 500 degrees C, 1 min annealing caused obvious in-diffusion of Au and O and out-diffusion of Ni. The Au has even diffused into the p-GaN/metal interface. These diffusion behaviours are believed to cause the sharp decrease of rho(c). Annealing for 5 min at 500 degrees C caused Au and Ni to in-diffuse and out-diffuse further, respectively. A longer annealing time, e. g. 10 min, only caused further in-diffusion of O. As for Au and Ni, no further in-diffusion and out-diffusion has been found for the samples annealed for 10 min at 500 degrees C. Therefore, the further decrease of (5 x 10(-4) Omega cm(2)) after 10 min annealing is attributed to the formation of more NiO at the interface. However, when the annealing temperature reached 600 degrees C, the rho(c) increases greatly. The reason for the increase of the rho(c) is also discussed.