Abstract:The temperature- and time-dependent diffusion behaviours of oxidized Au/Ni/p-GaN ohmic contacts were studied with Rutherford backscattering spectroscopy/channelling (RBS/C). It was found that, after annealing at 450 degrees C, the Au diffused into the electrodes and contacted to the p-GaN and the O diffused into the electrodes to form NiO. Both of these processes are believed to be responsible for the sharp decrease in the specific contact resistance (rho(c)) at 450 degrees C. At 500 degrees C, the O diffused deeper into the interface. As a result, the reached the lowest value at this temperature. The influence of the annealing time was also investigated. It was found that, at 500 degrees C, 1 min annealing caused obvious in-diffusion of Au and O and out-diffusion of Ni. The Au has even diffused into the p-GaN/metal interface. These diffusion behaviours are believed to cause the sharp decrease of rho(c). Annealing for 5 min at 500 degrees C caused Au and Ni to in-diffuse and out-diffuse further, respectively. A longer annealing time, e. g. 10 min, only caused further in-diffusion of O. As for Au and Ni, no further in-diffusion and out-diffusion has been found for the samples annealed for 10 min at 500 degrees C. Therefore, the further decrease of (5 x 10(-4) Omega cm(2)) after 10 min annealing is attributed to the formation of more NiO at the interface. However, when the annealing temperature reached 600 degrees C, the rho(c) increases greatly. The reason for the increase of the rho(c) is also discussed.

Effects of Oxidation by O2 Plasma on Formation of Ni∕Au Ohmic Contact to P-Gan

Oxidation Treatment on Ni/Au Ohmic Contacts to P‐type GaN

Microstructure Evolution of Oxidized Ni/Au Ohmic Contacts to P-Gan Studied by X-Ray Diffraction

Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time

Ohmic Contact Mechanism of Ni/Au Contact to P-Type Gan Studied by Rutherford Backscattering Spectrometry

Temperature Dependent Diffusion and Epitaxial Behavior of Oxidized Au/Ni/P-Gan Ohmic Contact

The Significant Effect of the Thickness of Ni Film on the Performance of the Ni/Au Ohmic Contact to P-Gan

NiO Removal of Ni/Au Ohmic Contact to P-Gan after Annealing

Correlation of Contact Resistance with Metal Diffusion for Oxidized Au/Ni/p-GaN Contacts Studied Using Rutherford Backscattering Spectroscopy

Reversible Effect of the Thermal Processing of Ni/Au Ohmic Contact to P-Gan

Thermal Annealing Effects on Ni/Au Contacts to P Type Gan in Different Ambient

Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p-Type GaN as an Insight into the Role of Ni and Au in Standard p-Type GaN Contacts

The Study on the Reflectance and Resistance of Ni/Ag/Ti/Au Electrode Contact to p-GaN

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN

The Dichotomous Role of Oxygen in the Ohmic Contact Formation on P-Type GaN Grown by MBE and MOCVD

Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face N-Gan

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Rapid Thermal Annealing Induced Changes on the Contact of Ni/Au to N-doped ZnO

Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Pd/In/Ni/Au Contact to N-Polar N-Type Gan Fabricated by Laser Lift-Off