Abstract:In order to realize the ZnO materials better in the application of the photoelectric devices,this paper studies the Ag/Au ohmic contact to n-ZnO thin films.Semiconductor characteristic analysis system is used to measure the I-Vcharacteristic curve.Dig disc method is used to test the ohmic contact resistance rate.They reflect the influence of annealing temperature on the contact characteristics.Auger electron spectroscopy(AES)is used to study the microscopic structure of ohmic contact finally.The results show that Ag(50nm)/Au(100nm)ohmic contact to n-ZnO thin film is the best when annealing temperature is 500℃.The as-deposited Ag/Au scheme shows a specific contact resistivity of 2.3×10-2Ω·cm-2.And the lowest specific contact resistivity is 5.2×10-4Ω·cm-2.The specific contact resistivity shows a decreasing tendency with the annealing temperature up to 500℃.However,for the sample annealed above 600℃,the I-Vcurves reveal the characteristics of local bending,which shows rectification trends.Interface diffusions and reactions induced by annealing treatment are found to be responsible for the decrease of ohmic contact resistivity and the rectification trends.The reflection of Ag/Au characteristic is better than that with other metal depositions.

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