Abstract:P-type ZnO films with c-axis orientation deposited by DC reactive magnetron sputtering are first reported in this paper. ZnO films were prepared in NH3–O2 atmosphere (ammonia concentration varied from 0% to 67%) with the substrate temperature in the range of 400–550°C. The properties were examined by X-ray diffraction, atomic force microscopy, Hall measurement, spreading resistance processing and optical transmission spectra. Results showed that excess zinc and interstitial hydrogen play important roles in the doping process. The N-doped ZnO film deposited on α-Al2O3 (0001) at a substrate temperature of 500°C and an ammonia concentration of 50% showed p-type conduction with good electrical properties. A carrier density of 3.2×1017cm−3 and resistivity of 35Ωcm were observed. The p-type ZnO films possess a transmittance of about 90% in the visible region and a band gap of 3.21eV at room temperature. In addition, ZnO p–n homojunctions on p-Si(100) substrate (p-ZnO:N/n-ZnO/p-Si) have also been first achieved, which could further open the door for practical applications in diverse optical devices.

Junction Properties of Nitrogen-Doped Zno Thin Films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

Microstructure, Wettability and Electrical Properties of N-Zno/zno-sl/p-cu2o Heterojunction

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Electrical Characterization of Zno-Based Homojunctions

ZnO P-N Homojunctions and Ohmic Contacts to Al–N-co-doped P-Type ZnO

N and Al co-doping as a way to p-type ZnO without post-growth annealing

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Control and Improvement of P-Type Conductivity in Indium and Nitrogen Codoped Zno Thin Films

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

p-Type conduction in Al–N co-doped ZnO films

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Properties of N-doped ZnO thin films in annealing process

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Synthesis and Electrical Properties of p + -Si/n-ZnO Nanowires Heterojunction

Electrical and structural properties of heterojunction AZO, NZO and NiO thin films

Ni/Au Ohmic Contacts to p-Type N-Doped ZnO