Abstract:N-doped ZnO (ZnO:N) thin films were prepared by magnetron sputtering using NH3 as the N-doping source. The as-grown ZnO:N films showed high resistivity ∼103 Ω cm due to the hydrogen passivation effect. The properties of ZnO:N films under various annealing conditions (e.g., temperature, environment, and duration) were systematically studied with the aim of achieving p-type conductivity. The lowest room-temperature resistivity was found to be 7.73 Ω cm for p-type ZnO films annealed at 500 ∘C for 10 min in N2, with the hole concentration of 9.36×1017 cm−3 and Hall mobility of 0.86 cm2 V −1 s−1. Optical absorption spectra were performed to analyze the behaviors of hydrogen and nitrogen in p-type doping of ZnO. The NO–H complexes were largely present in as-grown ZnO films, which could be dissociated by thermal annealing resulting in activated N acceptors. Thus, the p-type conductivity was achieved in annealed ZnO:N films. A hydrogen-assisted nitrogen-acceptor doping mechanism was proposed as an answer for the achievement of p-type ZnO.

Control and Improvement of P-Type Conductivity in Indium and Nitrogen Codoped Zno Thin Films

P-Type Behavior in In–N Codoped ZnO Thin Films

Junction Properties of Nitrogen-Doped Zno Thin Films

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Formation of p-type ZnMgO thin films by In–N codoping method

Control of Conduction Type in Al- and N-codoped ZnO Thin Films

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique

Control of P- and N-Type Conductivities in Li-Doped Zno Thin Films

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

p-Type conduction in Al–N co-doped ZnO films

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Improved N–Al Codoped P-Type ZnO Thin Films by Introduction of a Homo-Buffer Layer

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Preparation of P-Type ZnO Films by Al+N-codoping Method

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Properties of N-doped ZnO thin films in annealing process