Control of Conduction Type in Al- and N-codoped ZnO Thin Films

GD Yuan,ZZ Ye,LP Zhu,Q Qian,BH Zhao,RX Fan,CL Perkins,SB Zhang
DOI: https://doi.org/10.1063/1.1928318
IF: 4
2005-01-01
Applied Physics Letters
Abstract:p -type ZnO thin films have been fabricated by an Al- and N-codoping technique at the growth temperature between 380 and 480 °C, as identified by the Hall measurement. At lower and higher temperatures, however, the samples are n type. The best p-type sample shows a resistivity and hole concentration of 24.5 Ω cm and 7.48×1017cm−3 at room temperature, respectively. Spread resistance depth profile further shows the transition from n-type substrate to p-type ZnO through a clearly defined depletion region. Photoluminescence spectra also show low signal in deep level transition, indicating a low density of native defects.
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