Abstract:P-type ZnO films with c-axis orientation deposited by DC reactive magnetron sputtering are first reported in this paper. ZnO films were prepared in NH3–O2 atmosphere (ammonia concentration varied from 0% to 67%) with the substrate temperature in the range of 400–550°C. The properties were examined by X-ray diffraction, atomic force microscopy, Hall measurement, spreading resistance processing and optical transmission spectra. Results showed that excess zinc and interstitial hydrogen play important roles in the doping process. The N-doped ZnO film deposited on α-Al2O3 (0001) at a substrate temperature of 500°C and an ammonia concentration of 50% showed p-type conduction with good electrical properties. A carrier density of 3.2×1017cm−3 and resistivity of 35Ωcm were observed. The p-type ZnO films possess a transmittance of about 90% in the visible region and a band gap of 3.21eV at room temperature. In addition, ZnO p–n homojunctions on p-Si(100) substrate (p-ZnO:N/n-ZnO/p-Si) have also been first achieved, which could further open the door for practical applications in diverse optical devices.

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique

Preparation of P-Type ZnO Films by Al+N-codoping Method

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

p-Type conduction in Al–N co-doped ZnO films

Control of Conduction Type in Al- and N-codoped ZnO Thin Films

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

P-Type Behavior in In–N Codoped ZnO Thin Films

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Reproducibility and Stability of N–Al Codoped P -Type ZnO Thin Films

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition

Improved N–Al Codoped P-Type ZnO Thin Films by Introduction of a Homo-Buffer Layer

Effect of Oxygen Partial Pressure Ratios on the Properties of Al–N Co-Doped ZnO Thin Films