Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

J. G. Lu,S. Fujita,T. Kawaharamura,H. Nishinaka
DOI: https://doi.org/10.1016/j.cplett.2007.04.085
IF: 2.719
2007-01-01
Chemical Physics Letters
Abstract:N-doped ZnO thin films were prepared by atmospheric pressure mist chemical vapor deposition. The behaviors of H and N impurities were systematically studied, and a hydrogen-assisted nitrogen-doping mechanism was proposed to produce p-type ZnO. The H and N concentrations showed a linear correlation in as-grown samples. The p-type conductivity was realized by rapid thermal annealing in N2 environment, with the hole concentrations typically of 1017cm−3 at 475–500°C. In this temperature window the dissociated hydrogen showed significant outdiffusion, while the nitrogen still remained stable in ZnO and behaved as effective acceptors resulting in good p-type conductivity.
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