Abstract:Different nitrogen sources, pure N2, pure NO, and NO mixed with O2 (25% NO + 75% O2), are used to confirm the effects of N+, N2+, and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of N2, NO, and NO mixed with O2, the major implanted ions are, respectively, N2+ ions, N2+ mixed with NO+ ions, as well as N+ mixed with O+ ions, confirmed by the optical emission spectra of plasma. After activation by postimplanted annealing, the photoluminescence and X-ray photoelectron spectroscopy analyses indicate that the implanted N+, N2+, and NO+ ions replace the O sites and form nitrogen atom substitutions at O sites [(NO)], nitrogen molecule substitutions at O sites [(N2)O], as well as zinc nitrite and zinc nitrate, respectively. Among all the N-induced defects, only NO contribute to the p-type conversion of ZnO films. That explains why p-type conversion is only successfully achieved by NO mixed with O2, while others still remain n-type conductivity. The mechanism of p-type conversion by N2, NO, and NO mixed O2 PIII was investigated in this paper.

Formation of P-Type Mgzno by Nitrogen Doping

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Preparation and Characterization of N Doped P-type MgZnO Film

Preparation and Characterization of Nitrogen-doped P-type MgxZn1-xO Film

Stability of P-type Conductivity in Nitrogen-Doped MgZnO Thin Film

High Temperature Dehydrogenation for Realization of Nitrogen-Doped P-Type ZnO

P-Type Conductivity and Stability of Nitrogen-Doped Zinc Oxide Prepared by Magnetron Sputtering

Formation of p-type ZnMgO thin films by In–N codoping method

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Control of Structure, Conduction Behavior, and Band Gap of Zn1−xMgxO Films by Nitrogen Partial Pressure Ratio of Sputtering Gases

Dominant Factor Determining the Conduction-Type of Nitrogen-Doped Zno Film

The Fabrication of Na Doped P -Type Zn 1− X Mg X O Films by Pulsed Laser Deposition

Nitrogen partial pressure-dependent Mg concentration, structure, and optical properties of Mg x Zn 1− x O film grown by magnetron sputtering

Properties of N-doped ZnO thin films in annealing process

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

p-Type conduction in Al–N co-doped ZnO films

Phosphorus Doped Zn(1-x)Mg(x)O Nanowire Arrays.

Contributions of <formula formulatype="inline"><tex Notation="TeX">$\hbox{N}^{+}$</tex></formula>, <formula formulatype="inline"><tex Notation="TeX">$\hbox{N}_{2}^{+}$</tex></formula>, <formula formulatype="inline"><tex Notation="TeX">$ \hbox{NO}^{+}$</tex></formula> Ion Implantation to p-Type Conve