Abstract:Mg(x)Zn(1-x)O thin films were grown by the radio-frequency magnetron sputtering technique in Ar + N(2) and O(2) + N(2) ambient with different nitrogen partial pressure ratios on quartz substrates at 773 K. The correlations between the growth ambient and the resultant films properties were discussed. It is found that Mg concentration, structure and band gap of the MgZnO film can be tuned by increasing the nitrogen partial pressure ratio of the Ar + N(2) ambient, but cannot be tailored by changing the nitrogen partial pressure ratio of the O(2) + N(2) ambient. X-ray diffraction shows that the Mg(x)Zn(1-x)O films grown in the Ar + N(2) ambient consist of wurtzite phase at the nitrogen partial pressure ratios from 0% to 50%, a mixture of wurtzite and cubic phases at the ratios of 78-83%, and a cubic phase at 100%, whereas such structure transformation did not exist in the Mg(x)Zn(1-x)O film deposited in the O(2) + N(2) ambient by changing the nitrogen partial pressure ratio. The Mg concentration increases linearly with the increasing nitrogen partial pressure ratio of Ar + N(2), but does not vary with the increasing nitrogen partial pressure ratio of O(2) + N(2). The band gap increases linearly from 3.64 to 4.02 eV for the wurtzite Mg(x)Zn(1-x)O deposited in the Ar + N(2) ambient as nitrogen partial pressure ratio increases from 0% to 50%, but the band gap of the Mg(x)Zn(1-x)O film deposited in the O(2) + N(2) ambient keeps a constant of 3.63 eV with oxygen gas and reaches 6.30 eV abruptly in pure nitrogen ambient (without oxygen gas). The Mg(x)Zn(1-x)O films, which are grown in the Ar + N(2) and O(2) + N(2) ambient at nitrogen partial pressure ratio from 50% to 100% and 83% to 100%, respectively, show p-type conduction after annealing.

Preparation and Characterization of Nitrogen-doped P-type MgxZn1-xO Film

Preparation and Characterization of N Doped P-type MgZnO Film

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Formation of P-Type Mgzno by Nitrogen Doping

Control of Structure, Conduction Behavior, and Band Gap of Zn1−xMgxO Films by Nitrogen Partial Pressure Ratio of Sputtering Gases

Nitrogen partial pressure-dependent Mg concentration, structure, and optical properties of Mg x Zn 1− x O film grown by magnetron sputtering

Stability of P-type Conductivity in Nitrogen-Doped MgZnO Thin Film

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Effect Of Growth Ambient On The Structure And Properties Of Mg(X)Zn(1-X)O Thin Films Prepared By Radio-Frequency Magnetron Sputtering

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Plasma-activated Nitrogen-Doped P-Type ZnO Thin Films with Multi-Buffer-layers Grown on Sapphire (0001) by L-MBE

P-Type Conductivity and Stability of Nitrogen-Doped Zinc Oxide Prepared by Magnetron Sputtering

Electrical And Structural Properties Of P-Type Zno : N Thin Films Prepared By Plasma Enhanced Chemical Vapour Deposition

Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

P-type ZnO:N Films Prepared by Thermal Oxidation of Zn 3 N 2