Abstract:Over the past two decades, there have been numerous reports about the p-type behavior of N-doped ZnO. To date, however, its origin still remains mysterious, especially, N ion-implanted ZnO system. Herein, ZnO films were implanted with 70 keV N ions to a fluence of 1 × 1017 cm−2 at room temperature, followed by annealing in the range of 750–950 °C. The obtained p-type ZnO films have a widely hole concentration of 2.87 × 1015 ~ 2.64 × 1016 cm−3, a mobility of 1.37 ~ 7.27 cm2V-1s−1 and a resistivity of 148.3 ~ 299.4 Ω.cm. The thermal evolution of point defects and the possible shallow acceptors in N-implanted ZnO films were further investigated by means of Raman scattering, Photoluminescence (PL) and Electron paramagnetic resonance (EPR). The results show that abundant intrinsic-related defects including zinc interstitials (Zni), oxygen vacancies (VO) and zinc vacancies (VZn) were introduced during ion implantation. It is demonstrated that appropriate post-annealing can not only reduce the compensation of donor defects, but also facilitate the formation of N-related shallow acceptor complexes, both of which contribute to the p-type conduction transition of N-implanted ZnO films. The non-axial NO-VZn complexes are proposed to be a kind of potential and stable acceptors in N ion-implanted ZnO films.

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Properties of N-doped ZnO thin films in annealing process

Junction Properties of Nitrogen-Doped Zno Thin Films

High Temperature Dehydrogenation for Realization of Nitrogen-Doped P-Type ZnO

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Formation of P-Type Mgzno by Nitrogen Doping

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

p-Type conduction in Al–N co-doped ZnO films

Dual-acceptor P-Type Behaviour in ZnO Films Grown by Plasma-Assisted Metalorganic Chemical Vapour Deposition

Dominant Factor Determining the Conduction-Type of Nitrogen-Doped Zno Film

N and Al co-doping as a way to p-type ZnO without post-growth annealing

First-principles study of the formation mechanisms of nitrogen molecule in annealed ZnO

P-type ZnO:N Films Prepared by Thermal Oxidation of Zn 3 N 2

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Compensation Mechanism in N-doped ZnO Nanowires

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Mechanism of Na-doped P-Type ZnO Films: Suppressing Na Interstitials by Codoping with H and Na of Appropriate Concentrations