Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Allenic A.,Guo W.,Chen Y.B.,Zhao G.Y.,Pan X.Q.,Che Y.,Hu Z.D.,Liu B.
DOI: https://doi.org/10.1557/jmr.2007.0294
IF: 2.7
2007-01-01
Journal of Materials Research
Abstract:Epitaxial ZnO thin films doped uniformly with nitrogen at 1020 atoms/cm3 were fabricated by pulsed laser ablation of a Zn-rich Zn3N2 target. The films grown at 300 °C and annealed at 600 °C in O2 showed p-type conductivity. Two acceptor levels at 105 and 224 meV were determined by temperature-dependent Hall and photoluminescence measurements of the p-type samples. Transmission electron microscopy studies revealed that the p-type ZnO films consist of 10–20 nm columnar grains with a high density of defects and grain boundaries that may facilitate the annihilation of native donors and the activation of acceptors during postdeposition annealing.
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