Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Jianguo Lu,Zhizhen Ye,Lei Wang,Jingyun Huang,Binghui Zhao
DOI: https://doi.org/10.1016/S1369-8001(02)00114-2
IF: 4.1
2002-01-01
Materials Science in Semiconductor Processing
Abstract:N-doped p-type ZnO films have been synthesized on α-Al2O3 (0001) substrate by solid-source chemical vapor deposition using Zn(CH3COO)2·2H2O as the precursor and CH3COONH4 as the nitrogen source. The properties for ZnO films are dependent greatly on the growth conditions. Results show that the best electrical properties of the p-type film, such as carrier density N=9.8×1017cm−3, resistivity ρ=20Ωcm and Hall mobility μ=0.97cm2/Vs, were induced at the substrate temperature of 500°C with a precursor temperature of 250°C and a nitrogen source of 150°C, under which the highest mixed orientation for (100) and (110) planes of films was also achieved. The p-type ZnO films possess a transmittance of about 90% in visible region and a band gap of about 3.20eV at room temperature.
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