Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Y. J. Zeng,Z. Z. Ye,W. Z. Xu,B. Liu,Y. Che,L. P. Zhu,B. H. Zhao

DOI: https://doi.org/10.1016/j.matlet.2006.04.001

IF: 3

2006-01-01

Materials Letters

Abstract:N-doped, p-type ZnO thin films have been grown by plasma-assisted metal-organic chemical vapor deposition method. The results under 2 optimized growth conditions included a resistivity of 1.72 Omega cm, a Hall mobility of 1.59 Cm-2/V s, and a hole concentration of 2.29x 10(18) cm(-3) and were consistently reproducible. A N-related free-to-neutral-acceptor emission and an associated phonon replica were evident in room temperature photoluminescence spectra, from which the N acceptor energy level in ZnO was estimated to be 180 meV above the valence band maximum. (c) 2006 Elsevier B.V. All rights reserved.