P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Y. J. Zeng,Z. Z. Ye,W. Z. Xu,J. G. Lu,H. P. He,L. P. Zhu,B. H. Zhao,Y. Che,S. B. Zhang
DOI: https://doi.org/10.1063/1.2217165
IF: 4
2006-01-01
Applied Physics Letters
Abstract:We report on intrinsic p-type ZnO thin films by plasma-assisted metal-organic chemical vapor deposition. The optimal results give a resistivity of 12.7Ωcm, a Hall mobility of 2.6cm2∕Vs, and a hole concentration of 1.88×1017cm−3. The oxygen concentration is increased in the intrinsic p-type ZnO, compared with the n-type layer. Two acceptor states, with the energy levels located at 160 and 270meV above the valence band maximum, are identified by temperature-dependent photoluminescence. The origin of intrinsic p-type behavior has been ascribed to the formation of zinc vacancy and some complex acceptor center.
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