Abstract:P-type ZnO films with c-axis orientation deposited by DC reactive magnetron sputtering are first reported in this paper. ZnO films were prepared in NH3–O2 atmosphere (ammonia concentration varied from 0% to 67%) with the substrate temperature in the range of 400–550°C. The properties were examined by X-ray diffraction, atomic force microscopy, Hall measurement, spreading resistance processing and optical transmission spectra. Results showed that excess zinc and interstitial hydrogen play important roles in the doping process. The N-doped ZnO film deposited on α-Al2O3 (0001) at a substrate temperature of 500°C and an ammonia concentration of 50% showed p-type conduction with good electrical properties. A carrier density of 3.2×1017cm−3 and resistivity of 35Ωcm were observed. The p-type ZnO films possess a transmittance of about 90% in the visible region and a band gap of 3.21eV at room temperature. In addition, ZnO p–n homojunctions on p-Si(100) substrate (p-ZnO:N/n-ZnO/p-Si) have also been first achieved, which could further open the door for practical applications in diverse optical devices.

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Realization of p-type ZnO films via monodoping of Li acceptor

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

Fabrication and Post-Anneal Activation of P-Type ZnMgO:Li Film Using Dc Reactive Magnetron Sputtering

Fabrication of P-Type ZnO Thin Films Via DC Reactive Magnetron Sputtering by Using Na As the Dopant Source

Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

P-Type Behavior in Li-doped Zn0.9Mg0.1O Thin Films

P-Type Behavior in Na-doped ZnO Films and ZnO Homojunction Light-Emitting Diodes

Identification of Acceptor States in Li-Doped P-Type Zno Thin Films

P-Type ZnO Thin Films Fabricated by Dc Magnetron Reactive Sputtering Method at Different Substrate Temperatures

A Facile Route to Realize P-Type ZnO Thin Films Via Li–F Codoping: Experiments and Theory

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Fabrication of Sb-Doped P-Type Zno Thin Films by Pulsed Laser Deposition