Abstract:ZnO is a transparent conductive oxide that has received great attention over the past few decades, as it is a key component in light-emitting diodes, gas sensors, and solar cells. However, the electrical conductivity of intrinsic ZnO is not ideal, and thus, ZnO is often doped with appropriate elements such as fluorine (F). Unfortunately, the lack of adequate precursors in traditional doping methods may increase the difficulty of ZnO doping with F. In this work, we realized, for the first time, high-concentration F-doped ZnO thin films with a high Hall mobility of 20.7 cm2/V/s via femtosecond-laser hyperdoping. The highest atomic percentage of F was determined to be 8.3 at.%, which was over three times larger than that of previously reported F-doped ZnO films. Compared with pristine ZnO, the highest carrier concentration of the F-doped ZnO could be increased by four orders of magnitude, and the resistivity could be reduced by three orders of magnitude. Our results demonstrated that the femtosecond-laser hyperdoping technology could achieve efficient non-metallic hyperdoping of ZnO with high transparency and Hall mobility, thereby reducing the power dissipation and improving the current carrying capacity of ZnO-based devices.

A Facile Route to Realize P-Type ZnO Thin Films Via Li–F Codoping: Experiments and Theory

High-Concentration F-Incorporated Zno Thin Films Doped Via Femtosecond-Laser Hyperdoping

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

Control of P- and N-Type Conductivities in Li-Doped Zno Thin Films

P-Type Behavior in Li-doped Zn0.9Mg0.1O Thin Films

Realization of p-type ZnO films via monodoping of Li acceptor

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

Preparation and Properties of P-Type Ag-doped ZnMgO Thin Films by Pulsed Laser Deposition

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique

Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition

Effect of Oxygen Pressure on Structural and Electrical Properties of Pulsed Laser Deposition-Derived Zn0.95mg0.05o: Li Thin Films

Preparation of P-Type ZnO Films by Al+N-codoping Method

Preparation and Photoluminescent Properties of P-Type Li-doped ZnMgO Thin Films

Effects of growth temperature on Li–N dual-doped p-type ZnO thin films prepared by pulsed laser deposition

p-Type conduction in Al–N co-doped ZnO films

Optical properties of p-type ZnO doped by lithium and nitrogen

P-Type Behavior in In–N Codoped ZnO Thin Films